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Expert Kathy Erickson’s 3-page article for semiconductor manufacturers, “CVD Risk Mitigation: Decrease defect density and increase mean time between maintenance (MTBM) with more effective filtration,” is available now on tsi.com.
Erickson’s article explains how the filtration method after liquid vaporization in semiconductor manufacturing can:
Chemical Vapor Deposition (along with ALD and other sub-sets of CVD like PECVD and MOCVD) is one of the most important steps in microelectronic device fabrication. Defects are a costly problem during this phase but some defects are preventable. In this new paper, you’ll learn:
View and download the new white paper, “CVD Risk Mitigation: Decrease Defect Density and Increase Mean Time Between Maintenance (MTBM) with More Effective Filtration.”
MSP, a Division of TSI, offers 316SS Vapor Process Gas (VPG) filters featuring ultra-high filtration efficiency, ultra-low pressure drop, a stainless steel construction, and more thermal mass than other commercial solutions.
TSI expert Kathy Erickson has a background in Material Science and Engineering from the University of Minnesota. She began her career in the semiconductor industry as a R&D process engineer at Applied Materials in Santa Clara, California, where she became the primary inventor on a patent for a germanium doped BPSG dielectric layer reflow process. She transitioned into the field of aerosol science with TSI Incorporated in Shoreview, MN, and in 2018 moved to MSP – a Division of TSI to focus on liquid source vaporization for the Semiconductor industry. Kathy has authored and presented multiple journal articles and conference presentations on a wide variety of aerosol science and semiconductor process related topics.